Exfoliation of GaAs caused by MeV [sup (1)] H and [sup (4)] He ion implantation at <100>, <100>axial and random orientations

Exfoliation of GaAs caused by MeV [sup (1)] H and [sup (4)] He ion implantation at <100>, <100>axial and random orientations

Artikkeli

;

Räisänen, Jyrki

Julkaisussa: Nuclear instruments & methods in physics research. Sect. B. Beam interactions with materials 94 (1994), s. 245-250

Tallennettuna:

Kieli

englanti

Alkuteoksen kieli

englanti

Aiheet

Ion beam effects (INS:A6180J)

Doping and implantation of impurities (INS:A6170T)

Saatavuustiedot