Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Sparad:
| Fysisk beskrivning |
xiv, 97, [72] sivua : diagr., tab |
|---|---|
| Språk |
engelska |
| Förlag |
Göteborg :
Chalmers University of Technology. Dept. of Microtechnology and Nanoscience. Microwave Electronics Laboratory,
2005.
|
| Lärdomsprov | Väitöskirja : CTH Göteborg |
| Serie | Technical report MC2, ISSN 1652-0769; 44. Doktorsavhandlingar vid Chalmers tekniska högskola, N.S, ISSN 0346-718X; 2343. |
| Klassifikation | |
| Ämnen | |
| Mer information | Stefan Davidsson |
| ISBN |
91-7291-661-3 |
| Hämta fulltext | |