Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
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| Physical Description |
xiv, 97, [72] sivua : diagr., tab |
|---|---|
| Language |
English |
| Language of Original Work |
English |
| Published |
Göteborg :
Chalmers University of Technology. Dept. of Microtechnology and Nanoscience. Microwave Electronics Laboratory,
2005.
|
| Dissertation Note | Väitöskirja : CTH Göteborg |
| Series | Technical report MC2, ISSN 1652-0769; 44. Doktorsavhandlingar vid Chalmers tekniska högskola, N.S, ISSN 0346-718X; 2343. |
| Classification | |
| Subjects | |
| Additional Information | Stefan Davidsson |
| ISBN |
91-7291-661-3 |
| Get full text | |